an amp comdanv radar pulsed power transistor, sw, 1 .oms pulse, 10% duty 1.2 - 1.4 ghz PH1214-55EL features l npn silicon microwave power transistor l common base configuration l broadband class c operation l matrix geometry l diffused emitter ballasting resistors l gold metalization system l internal input impedance matching l hermetic metal/ceramic package absolute maximum ratinas at 25c i parameter 1 symbol 1 rating 1 units 1 1 collector-emittervoltage ) v,,, 1 58 i v i emitter-basevoltage i vm i 3.0 i v i collector current (peak) total power dissipation junctiontemperature ?c 7.0 a p tot 100 w t, 200 ?c storagetemperature t sig -65 to +200 ?c v2.00 903 (22 85) j inches 1.035? linless ut?ierwisc noted. tdler4nces are (mi_limfirrs ~13ym) - - electrical characteristics at 25c broadband test fixture impedances f(ghz) z,,(q) z,,(q) 1.20 5.7 + jl.8 5.5 - j3.4 i 1.30 i 2.4 + il.3 i 3.3-i2.3 i i 1.40 i 2.4 + j0.6 i 2.0-j2.3 1 specifications subject to change without notice. 9-136 north america: tel. (800) 366-2266 n asia/pacific: tel. +81 (03) 3226-1671 fax (800) 618-8883 fax +81 (03) 3226-1451 m/a-com, inc. n europe: tel. +44 (1344) 869 595 fax +44 (1344) 300 020
radar pulsed power transistor, 40w ph1214-40m v2.00 rf test fixture input 50 ohms ?cc 0 p-j;;- / i x/4 c2 540 r- i ii 00 output 50 ohms artwork dimensions in mils cl c2 100 pf atc size a c3 47 uf 63 volts ql ph1214-40m board type: rogers 6010,5 ,025" thick, er = 10,s specifications subject to change without notice. m/a-com, inc. north america: tel. (800) 366-2266 m asia/pacific: tel. +81 (03) 3226-1671 fax (800) 618-8883 fax +81 (03) 3226-1451 9-135 m europe: tel. +44 (1344) 869 595 fax +44 (1344) 300 020
|
